Technologies based on permanent resistance changes in oxide or organic materials could be used to store energy, according to a German consortium of research institutes and companies studying a potential replacement for DRAM technology. The research into the properties of several materials and semiconducting mechanisms also is focusing on magnetization changes in ferromagnetic materials. For magnetic memories, the magnetizing effect would be achieved directly through current and not through magnetic fields, which would enable technologists to shrink semiconductors far beyond current MRAM approaches, according to a representative of Forschungszentrum Rossendorf in Dresden. Semiconductors are expected to shrink to 22nm geometries around 2016. Both approaches for the memory technologies would not rely on electric energy to maintain their information. The researchers also want to use the technologies in CMOS-compatible industrial processes, with the idea of shrinking the memory cells beyond the expected limit. The German government is providing about $11.9 million during the next three years for the project.
Saturday, July 18, 2009
Researchers Aim at Post-DRAM Era
EE Times (07/15/09) Hammerschmidt, Christoph
Technologies based on permanent resistance changes in oxide or organic materials could be used to store energy, according to a German consortium of research institutes and companies studying a potential replacement for DRAM technology. The research into the properties of several materials and semiconducting mechanisms also is focusing on magnetization changes in ferromagnetic materials. For magnetic memories, the magnetizing effect would be achieved directly through current and not through magnetic fields, which would enable technologists to shrink semiconductors far beyond current MRAM approaches, according to a representative of Forschungszentrum Rossendorf in Dresden. Semiconductors are expected to shrink to 22nm geometries around 2016. Both approaches for the memory technologies would not rely on electric energy to maintain their information. The researchers also want to use the technologies in CMOS-compatible industrial processes, with the idea of shrinking the memory cells beyond the expected limit. The German government is providing about $11.9 million during the next three years for the project.
Technologies based on permanent resistance changes in oxide or organic materials could be used to store energy, according to a German consortium of research institutes and companies studying a potential replacement for DRAM technology. The research into the properties of several materials and semiconducting mechanisms also is focusing on magnetization changes in ferromagnetic materials. For magnetic memories, the magnetizing effect would be achieved directly through current and not through magnetic fields, which would enable technologists to shrink semiconductors far beyond current MRAM approaches, according to a representative of Forschungszentrum Rossendorf in Dresden. Semiconductors are expected to shrink to 22nm geometries around 2016. Both approaches for the memory technologies would not rely on electric energy to maintain their information. The researchers also want to use the technologies in CMOS-compatible industrial processes, with the idea of shrinking the memory cells beyond the expected limit. The German government is providing about $11.9 million during the next three years for the project.
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